inchange semiconductor product specification silicon npn power transistors 2SD1825 description ? with to-220f package ? complement to type 2sb1223 ? high dc current gain. ? large current capacity and wide aso. ? darlington applications ? for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 70 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 6 v i c collector current 4 a i cm collector current-peak 6 a t c =25 ?? 20 p c collector dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1825 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =5ma; i e =0 70 v v (br)ceo collector-emitter breakdown voltage i c =50ma; r be = ?t 60 v v cesat collector-emitter saturation voltage i c =2a ; i b =4ma 1.5 v v besat base-emitter saturation voltage i c =2a ; i b =4ma 2.0 v i cbo collector cut-off current v cb =40v;i e =0 0.1 ma i ebo emitter cut-off current v eb =5v;i c =0 3.0 ma h fe dc current gain i c =2a ; v ce =2v 2000 5000 f t transition frequency i c =2a ; v ce =5v 20 mhz switching times t on turn-on time 0.6 | s t s storage time 2.7 | s t f fall time i c =2a; i b1 = - i b2 =4ma v cc =20v ,r l =10 |? 1.6 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SD1825 package outline fig.2 outline dimensions
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